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Vol.62, No.5, 340 ~ 351, 2024
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| Title |
| [Retracted]Optimization of Ion Beam-Assisted Deposition Process for Y2O3 Film to Enhance Plasma Resistance |
| 오철욱 Choluk Oh , 권오준 Ojun Kwon , 배영헌 Younghun Bae , 신혜진 Hyejin Shin , 권영민 Young Min Kwon , 조병진 Byungjin Cho |
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| Abstract |
| A ceramic-based plasma etcher window (Lid) requires robust resistance to plasma, especially when exposed to harsh fluorine-based plasma conditions. In this study, a Y2O3 film was deposited using e-beam evaporation with ion beam-assisted deposition (IBAD), and the physical properties of the IBAD-based Y2O3 coating film were thoroughly examined to enhance the mechanical and chemical resistance of the ceramic part, including the Y2O3 film, against etching plasma. The hardness and surface morphology of the IBADbased Y2O3 could be precisely controlled by various deposition processing parameters, such as beam voltage, beam current, and Ar/O2 gas ratio. Following the IBAD deposition of the Y2O3 film, a plasma etching process (Ar/CF4 mixture gases with 150 W RF power for 60 minutes) was applied to evaluate the plasma resistance of the deposited Y2O3 coating film. The surface morphology characteristics of the Y2O3 films were compared using atomic force microscopy, and their grain size was studied through scanning electron microscopy image analysis. Furthermore, a nanoindenter was used to determine the hardness of the Y22O3 film. These results suggest that optimizing the IBAD coating process requires an in-depth study that fully considers the correlation between deposition processing parameters and physical properties. This optimization can be instrumental for enhancing the durability of the ceramic part.
(Received 6 November, 2023; Accepted 27 January, 2024) |
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| Key Words |
| ceramic chuck, plasma resistance, Y2O3 film, ion beam-assisted deposition, deposition parameters |
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