| Abstract |
| Advanced electronic materials have attracted great interest for their potential use in flexible, largearea, and printable electronic applications. However, fabricating high-performance low-voltage thin-film transistors (TFTs) for those applications with these advanced semiconductors is still challenging because of a lack of dielectric materials which satisfy both the required electrical and physical performance. In this work, we report self-assembled hybrid multilayer gate dielectrics prepared using a facile solution procedure to achieve organic semiconductor and amorphous oxide semiconductor-based thin-film transistors with ultralow operating voltage. These self-assembled hybrid multilayer gate dielectrics were constructed by iterative selfassembly of synthesized bifunctional phosphonic acid-based organic molecules and ultrathin high-k hafnium oxide layers. The novel self-assembled hybrid multilayer gate dielectrics exhibit excellent dielectric properties with exceptionally large capacitances (up to 815 nF/ cm2) and low-level leakage current densities of < 1.56 × 10-6 A/cm2, featureless morphology (RMS roughness < 0.24 nm), and thermal stability (up to 300 ℃). Consequently, these hybrid gate dielectrics can be incorporated into thin-film transistors with pentacene as p-type organic semiconductors, and with indium oxide as n-type inorganic semiconductors. The resulting TFTs functioned at ultralow voltages (< ± 2 V) and achieved high transistor performances (hole mobility: 0.88 cm2/ V·s, electron mobility: 7.8 cm2/ V·s and on/off current ratio >104, and threshold voltage: ± 0.5 V).
(Received 4 November 2021; Accepted 18 November 2021) |
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| Key Words |
| self-assembled multilayer, hybrid gate dielectric, TFTs, ultralow-voltage operation |
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