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Vol.59, No.8, 545 ~ 551, 2021
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| Title |
| Influence of Ag interlayer Thickness on the Optical, Electrical and Mechanical Properties of Ti-doped In2O3/Ag/Ti-doped In2O3 Multilayer Flexible Transparent Conductive Electrode |
| 최수현 Su-hyeon Choe , 장진규 Jin-Kyu Jang , 김현진 Hyun-jin Kim , 최재욱 Jae-wook Choi , 허성보 Sung-bo Heo , 김유성 Yu-sung Kim , 공영민 Young-min Kong , 김대일 Daeil Kim |
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| Abstract |
| Transparent and conductive Ti-doped In2O3 (TIO)/Ag/Ti-doped In2O3 (TAT) multilayer films were deposited on colorless poly imide (CPI) substrates by direct current (DC) and radio frequency (RF) magnetron sputtering at room temperature. During deposition the thickness of both the top and bottom TIO layer was fixed at 30 nm, while the thickness of the Ag interlayer was varied, to 5, 10, and 15 nm, to enhance the optical, electrical and mechanical properties of the films. In the XRD analysis the TIO films did not show any characteristic peaks in the diffraction pattern. The 10 nm thick Ag inter layer showed some characteristic peaks of Ag (111), (200), (220) and (311), respectively, and the grain size of the Ag interlayer enlarged as Ag thickness increased. To investigate the most efficient Ag interlayer thickness, a figure of merit (FOM) based on the opto-electrical performance of the transparent conducting films was compared. The films with a 10 nm thick Ag interlayer exhibited a higher FOM of 1.71 × 10-2 Ω-1 than the other films. When the radius of the film's curvature was reduced to 1.7 mm, the TIO single layer films showed a 13 times increase in sheet resistance, while the TAT (30/10/30 nm) films showed an insignificant change in sheet resistance. From the observed results, it was concluded that the Ag interlayer in the TAT multilayer films enhanced the opto-electrical performance of the films and also acted as a potent bridge which assured the high flexibility endurance of the films.
(Received April 1, 2021; Accepted April 29, 2021) |
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| Key Words |
| TIO, Ag, X-ray diffraction, figure of merit, flexible endurance |
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