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Vol.55, No.3, 198 ~ 202, 2017
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| Title |
| Study of Novel EUV Absorber：Nickel & Nickel Oxide |
| 우동곤 Dong Gon Woo , 김정환 Jung Hwan Kim , 김정식 Jung Sik Kim , 홍성철 Seongchul Hong , 안진호 Jinho Ahn |
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| Abstract |
| The shadowing effect is one of the most urgent issues yet to be solved in high-volume manufacturing using extreme ultraviolet lithography (EUVL). Many studies have been conducted to mitigate the unexpected results caused by shadowing effects. The simplest way to mitigate the shadowing effect is to reduce the thickness of the absorber. Since nickel has high extinction coefficients in the EUV wavelengths, it is one of more promising absorber material candidates. A Ni based absorber exhibited imaging performance comparable to a Tantalum nitride absorber. However, the Ni-based absorber showed a dramatic reduction in horizontal-vertical critical dimension (H-V CD) bias. Therefore, limitations in fabricating a EUV mask can be mitigated by using the Ni based absorber. (Received August 24, 2016; Accepted August 26, 2016) |
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| Key Words |
| extreme ultraviolet lithography, semiconductor, thin film, optical properties, computer simulation |
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