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Vol.55, No.2, 139 ~ 144, 2017
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| Title |
| Effect of Side Lobe Intensity and Photon Shot Noise Effect on the Missing Hole Phenomenon in Extreme Ultraviolet Lithography |
| 김정식 Jung Sik Kim , 홍성철 Seongchul Hong , 장용주 Yong Ju Jang , 안진호 Jinho Ahn |
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| Abstract |
| The missing hole phenomenon in a wafer pattern is a critical issue in extreme ultraviolet lithography. It occurs randomly, even when the process conditions are consistent. The main reason for this phenomenon is thought to be the photon shot noise effect, which is a random reaction between photons and photoresist particles. We speculate that side lobe intensity can be another reason, since the missing hole is affected by the light distribution of the main hole pattern. To confirm the effect of side lobe intensity and photon shot noise on the missing hole phenomenon, we used an attenuated phase shift mask (PSM), whose reflectivity can be changed without varying the total absorber stack thickness. The results show that the photon shot noise effect and the side lobe intensity are both affected by the reflectivity of the PSM and are the critical factors for the missing holes. (Received August 24, 2016; Accepted August 25, 2016) |
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| Key Words |
| EUV phase shift mask, lithography simulation, missing hole, photon shot noise effect, side lobe intensity |
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