| Abstract |
| Zn thin films were deposited by thermal evaporation on Si substrates and then annealed at temperatures of 300.600 °C to form ZnO thin films. The effects of the annealing temperature on the structural and optical properties of the resulting ZnO thin films were investigated. The highest diffraction intensity for the ZnO (002) plane was obtained in the film formed at 500 °C. In the photoluminescence spectra of the ZnO films, the intensity of the ultraviolet (UV) emission increased with an increase in the oxidation temperature until 500 °C but decreased with further increases. The intensities of the defect-related emissions decreased with an increase in the annealing temperature from 300 to 500 °C. The ratio of the intensity of the UV emission to that of the visible emission (INBE/IDLE) was the highest for the ZnO thin film formed by annealing at 500 °C. (Received September 3, 2015) |
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| Key Words |
| zinc oxide, metallic Zn, thermal oxidation, structural properties, X-ray diffraction, annealing |
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