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Vol.54, No.2, 113 ~ 117, 2016
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| Title |
| The Structural, Electrical and Optical Properties of GZO/Ni Bi-layered Films |
| 공태경 Tae Kyung Gong , 전재현 Jae Hyun Jeon , 허성보 Sung Bo Heo , 차병철 Byung Chul Cha , 김준호 Jun Ho Kim , 정우창 Uoo Chang Jung , 박순 Soon Park , 공영민 Young Min Kong , 김대일 Daeil Kim |
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| Abstract |
| To investigate the effect of a Ni buffer layer on the structural, electrical and optical properties of GZO (Ga Doped ZnO) thin films, GZO single layer and GZO/Ni bi-layered films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating. GZO films had an optical transmittance of 87.1% in the visible wavelength region and an electrical resistivity of 1.0×10-2 Ωcm, while GZO/Ni films had a lower resistivity of 1.2×10-3 Ωcm and an optical transmittance of 82.4%. Based on the figure of merit, it is clear that a 2 nm thick Ni buffer layer enhanced the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications (Received December 24, 2014) |
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| Key Words |
| thin film, sputtering, electrical properties, optical properties, x-ray diffraction |
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