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Vol.53, No.11, 820 ~ 827, 2015
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| Title |
| Growth Mechanism of Multi-Layer Graphene at Low-Temperature by Plasma Enhanced Chemical Vapor Deposition |
| 윤가영 Kayoung Yun , 정다솔 Dasol Cheang , 현지연 Jiyeon Hyun , 노애란 Aeran Roh , 허선 Sun Heo , Lanxia Cheng , Jiyong Kim , 차필령 Pil Ryung Cha , 이재갑 Jagab Lee , 남호석 Ho Seok Nam |
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| Abstract |
| Multi-layer graphene is considered to be a potential replacement of copper wiring for LSI (large-scale integration). PECVD (plasma enhanced chemical vapor deposition) is one of the most reliable synthesis techniques to manufacture high-quality, large-scale graphene at low temperature. Compared with thermal CVD graphene, the relatively lower quality of PECVD graphene is its main drawback. In order to suggest a solution for this problem, we studied the growth mechanism of multi-layer graphene deposited onto nickel by PECVD at 400 ℃. We found that both segregation and solution-precipitation models affect the growth behavior of multi-layer graphene. To support this, we analyzed the influences of Ni-film thickness, cooling rate, and plasma energy on multi-layer graphene growth. The results from this study would be useful for optimizing graphene growth conditions for many applications. |
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| Key Words |
| graphene, PECVD, growth mechanism, synthesis, nickel catalyst |
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