| Abstract |
| This article shows that the aspect of chipping damage resulting from the mechanical dicing of semiconductor silicon wafers can vary with the revolving velocity of the sawing blade. The final separation of the silicon wafers occurs along the friction-induced notch formed toward the [001]-dicing direction under the revolving velocity of the blade lower than 1000 rpm. The scope of the resulting chipping damage due to the notch effect is not meaningfull beyond from the (010)-dicing plane. On the other hands, the final separation of the silicon wafers takes place due to the cleavage fracture along {011}-crystal planes tilted by 45° from the (010)-dicing plane under the revolving velocity of the blade higher than 5000 rpm. This work makes a conclusion that the scale of chipping damage can abruptly increase with the enhanced rotation speed of the sawing blade because of the transition from the notch effect to the cleavage fracture. |
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| Key Words |
| semiconductor, silicon wafer, crystal structure, dicing, damage |
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