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Vol.53, No.4, 302 ~ 306, 2015
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| Title |
| N-Electrode Optimization of GaN-Based Vertical Light-Emitting Diode Single-Chip with 3-W Output Power |
| 최원식 Won Sik Choi , 정탁 Tak Jeong , 박형조 Hyung Jo Park , 임시종 See Jong Leem |
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| Abstract |
| N-type electrode optimization of GaN-based vertical light-emitting diode (VLED) single chip with 3-W output power is reported. The various n-type electrode designs were proposed and simulated to optimize the output power and operating voltage. In addition, the LED chip with optimized n-type electrode design was fabricated in the form of a vertical-injection structure with chip dimensions of 2×2 mm2. Electrical and optical characteristics of the VLED were measured up to 3 A injection current under pulsed operation condition. Output power and forward voltage at 2.7 A were obtained to be 3.1 W and 3.67 V, respectively. (Received May 21, 2014) |
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| Key Words |
| optoelectronic materials, vapor deposition, electrical/optical properties, computer simulation, current spreading |
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