| Abstract |
| Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 ℃, an amorphous phase was formed, while for the sample annealed at 600 ℃, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 ℃ showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility. |
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| Key Words |
| oxides, sol-gel, electrical properties, microstructure, transmission electron microscopy (TEM) |
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