| Abstract |
| Sn-doped In2O3 (ITO)/TiO2 bi-layered films were deposited by radio frequency magnetron sputtering under different substrate temperatures, 100, 200, and 300 ℃, and the effects of substrate temperature on the structural, electrical and optical properties of the films were investigated. For all depositions, the thicknesses of the ITO and TiO2 films were kept constant at 100 and 5 nm, respectively, by controlling the deposition times. The films deposited at room temperature showed a relatively low optical transmittance of 76.0%, while the films deposited at 300 ℃ showed a higher transmittance of 80.7%, compared to the other films. In addition, the electrical resistivity of the films was influenced by substrate temperature and the lowest resistivity of 3.0 × 10.4 Ω·cm was observed in the films deposited at 300 ℃. From the experimental results, we concluded that increasing the substrate temperature enhanced the optical and electrical properties of the ITO films. |
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| Key Words |
| ITO, TiO2, optical properties, electrical properties, X-ray diffraction, sputtering |
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