|
Vol.51, No.6, 437 ~ 441, 2013
|
| Title |
| A study on a laser doped selective emitter for the high efficiency commercial Si solar cells |
| 김일환 Il Hwan Kim , 김기형 Ki Hyung Kim , 조영현 Young Hyun Cho , 이수홍 Soo Hong Lee |
|
|
|
| Abstract |
| Laser doping is used as an alternative to thermal annealing for formation of selective emitter Si solar cells. Laser processing has many advantages, such as a simple and low temperature process, high throughput, and low cost ownership. For fabrication of selectively low sheet resistance regions, we used a phosphosilicate glass layer as a dopant source, which was produced after furnace diffusion. We achieved an efficiency of 18.88% by using the laser doping with a PSG layer. (Received September 6, 2012). |
|
|
| Key Words |
| solar cells, selective emitter, laser doping |
|
|
 |
|
