| Abstract |
| We report on electrical and mechanical properties of silicon nitride (SiNx) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at 200℃ from SiH4 highly diluted in N2. The films were also prepared from SiH4 diluted in He for comparison. The N2 dilution was also effective in improving adhesion of the SiNx films, fascilitating construction of thin film transistors (TFTs). Metalinsulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the SiNx films from N2-diluted SiH4 were estimated to be 1×1013Ω · cm, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of 0.16 cm2/Vs, a threshold voltage of 3 V, a subthreshold slope of 1.2V/dec, and an on/off ratio of >106. |
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| Key Words |
| Diclectrics, vapor deposition, electrical properties, conductivity/resistivity, PECVD, silicon nitride, lowtemperature, TFT, highly-diluted gas |
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