| Abstract |
| Self-organized ruthenium (Ru) dots were fabricated by 400℃ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the 400℃ RTA conditions for 10, 30 and 60 seconds on all Si (100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates, Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si (100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < 20° wetting angle. |
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| Key Words |
| Ru dots, annealing, agglomeration, ALD, RTA |
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