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Vol.49, No.2, 187 ~ 192, 2011
Title
Fabrication of Mo Thin Film by Hydrogen Reduction of MoO3 Powder for Back Contact Electrode of CIGS
김영도 Young Do Kim , 김세훈 Se Hoon Kim , 조태선 Tae Sun Jo
Abstract
In order to obtain a suitable back contacting electrode for Cu(InGa)Se2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO3 powder. A MoO2 thin film was successfully deposited on substrates by using the CVT of volatile MoO3(OH)2 at 550℃ for 60 min in a H2 atmosphere. The Mo thin film was obtained by reduction of MoO2 at 650℃ in a H2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Ω/sq.
Key Words
solar cells, vapor deposition, hydrogen reduction, electrical properties, conductivity/resistivity
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