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Vol.48, No.6, 565 ~ 570, 2010
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| Title |
| Effects of Film Thickness and Annealing Temperature on the Specific Contact Resistivity and the Transmittance of the IZO Layers Grown on p-GaN by Roll-to-Roll Sputtering |
| 김준영 Jun Young Kim , 한승철 Seung Cheol Han , 김재관 Jae Kwan Kim , 김한기 Han Ki Kim , 이지면 Ji Myon Lee |
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| Abstract |
| We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of 4.70×10.4, 5.95×10.2, 4.85× 10.1 Ωcm2 on p-GaN when annealed at 600℃ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at 600℃ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved. |
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| Key Words |
| electrical/electronic materials, sputtering, electrical properties, electrical conductivity/resistivity, transmittance |
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