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Vol.48, No.5, 456 ~ 462, 2010
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| Title |
| Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes |
| 강기만 Ki Man Kang , 박민주 Min Joo Park , 곽준섭 Joon Seop Kwak , 김현수 Hyun Soo Kim , 권광우 Kwang Woo Kwon , 김영호 Young Ho Kim |
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| Abstract |
| We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Gaface n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laserlift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3×10(-2) Ω-cm2 after annealing at 300℃, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1×10(5) Ω-cm2 after annealing at 500℃ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2×10(-4) Ω-cm2 after annealing at 300℃. These results suggest that both the Ga-face n-GaN and N-face n-GaN. |
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| Key Words |
| semiconductors, sputtering, electrical properties electrical |
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