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Vol.47, No.9, 591 ~ 597, 2009
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| Title |
| Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-Layer Thin Film Resistors |
| 박경우 Kyoung Woo Park , 허성기 Sung Gi Hur , 안준구 Jun Ku Ahn , 윤순길 Soon Gil Yoon , Nguyen Duy Cuong |
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| Abstract |
| TiNxOy/TiNx multi-layer thin films with a high resistance(~kΩ) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by α and RF magnetron sputtering, respectively. TiNxOy/TiNx multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of TiNx layer(positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700℃ for 1 min exhibited good TCR value of approximately -54 ppm/℃ and a stable high resistivity around 20 kΩ/sq. with good reversibility. |
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| Key Words |
| thin film resistor, TiNxOy, TCR, thermal annealing, sputtering |
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