|
Vol.47, No.8, 466 ~ 474, 2009
|
| Title |
| The Effect of Substrate Surface Roughness on In-Situ Intrinsic Stress Behavior in Cu Thin Films |
| 조무현 Moo Hyun Cho , 황슬기 Seul Gi Hwang , 류상 Sang Ryu , 김영만 Young Man Kim |
|
|
|
| Abstract |
| Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using 100 μm thick Si(111) wafer substrates with three different levels of surface roughness. |
|
|
| Key Words |
| in-situ stress, intrinsic stress, thin film, evaporation, surface roughness |
|
|
 |
|
