발간논문

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Vol.47, No.5, 311 ~ 316, 2009
Title
Measurement of 2-Dimensional Dopant Profiles by Electron Holography and Scanning Capacitance Microscopy Methods
박경우 Kyoung Woo Park , 현문섭 Moon Seop Hyun , 유정호 Jung Ho Yoo , 양준모 Jun Mo Yang , 윤순길 Soon Gil Yoon , Ulugbek Shaislamov
Abstract
2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques. (Received January 6, 2009)
Key Words
semiconductor, 2-dimensional dopant profile, electron holography, scanning capacitance microscopy, reliability
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