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Vol.47, No.1, 38 ~ 44, 2009
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| Title |
| Effect of RF Power on the Structural, Optical and Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering |
| 신지훈 Ji Hoon Shin , 조영제 Young Je Cho , 최덕균 Duck Kyun Choi |
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| Abstract |
| To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from 7.3 cm2/Vs to 17.0 cm2/Vs, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies. |
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| Key Words |
| transparent oxide semiconductor, amorphous InGaZnO, a-IGZO, RF magnetron sputtering, RF power, thin film transistor |
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