| Abstract |
| We observed the in-situ stress behavior of Cu and Ag thin films during deposition using a thermal evaporation method. Multi-beam curvature measurement system was used to monitor the evolution of in-situ stress in Cu and Ag thin films on 100 Si(100) substrates. The measured curvature was converted to film stress using Stoney formula. To investigate the effects of the deposition rates on the stress evolution in Cu and Ag thin films, Cu and Ag films were deposited at rates ranging from 0.1 to 3.0A/s for Cu and from 0.5 to 4.0A/s for Ag. Both Cu and Ag films showed a unique three stress stages, such as ``initial compressive``, ``a tensile maximum`` and followed by ``incremental compressive`` stress. For both Cu and Ag films, there is no remarkable effect of deposition rate on the thickness and average stress at the tensile maximum. There is, however, a definite decrease in the incremental compressive stress with increasing deposition rate. |
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| Key Words |
| in-situ stress, thin film, deposition rate, thermal evaporation |
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