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Vol.46, No.3, 169 ~ 174, 2008
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| Title |
| Evolution of Surface Morphology During Wet-Etching of N-type GaN Using Phosphoric Acidic Solutions |
| 김재관 Jae Kwan Kim , 김택승 Taek Seung Kim , 조영제 Young Je Jo , 이지면 Ji Myon Lee |
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| Abstract |
| Characteristics of etching and induced surface morphology variation by wet-etching of n-type GaN were investigated using phosphoric acidic solutions. Generally, the etch-rate was increased as the temperature of the etch solutions was increased, and the highest etch rate of about 300 A/min was achieved at the temperature of 180℃. The morphology variation of the etched surface was observed by optical microscopy and atomic force microscopy. Initially, high density of hexagonal holes or pits were formed on the etched surface at the time of 40 min with the bimodal size of 20 μm or 5 μm, respectively. However, as the etching time was increased further, the lateral size of the hexagonal holes or pits was increased, and finally, joined and merged together at the time of 100 min. This means that the etching of n-type GaN by phosphoric acidic solutions proceeded through the lateral widening and the merging of initial holes and pits. |
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| Key Words |
| wet etch, n-type GaN, morphology, phosphoric acid |
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