발간논문

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Vol.34, No.11, 1525 ~ 1530, 1996
Title
A Study on the Pd Induced Lateral Crystallization Mechanism of Amorphous Si Thin Films
김태경 Tae Kyung Kim , 이석운 Seok Woon Lee , 이병일 Byung Il Lee , 주승기 Seung Ki Joo
Abstract
A new method of low temperature(≤500℃) crystallization of a-Si films was developed and crystallization mechanism was proposed. A few tens of micron long area from Patterned Pd films area could be crystallized in a short time at 500℃ by Metal-Induced Lateral Crystallization without any metal incorporations. The mechanism of the enhanced crystallization of a-Si film was studied by the microstructure analysis at the initial stage of the crystallization, by which the mechanism of MILC can be explained. In the case of Pd, crystallization of a-Si was initiated at the preformed Pd2Si in an a-Si matrix. The Pd2Si precipitates were separated into fine particles, and propagated into the a-Si matrix transforming a-Si into c-Si behind themselves. The growing direction of crystallized Si was <111>, which coincided with the epitaxial direction of Si with Pd2Si.
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