| Abstract |
| The effects of Bi2O3 addition to PbO/B2O3 solvent on the growth kinetics of (TbBi)3(FeAlGa)5O12 single crystal thick films grown by liquid phase epitaxy(LPE) were investigated. The growth of garnet films from PbO/B2O3/Bi2O3 solvent was higher than that from PbO/B2O3. Decreasing molar ratio R1(Fe2O3/Y2O3) and increasing R3 (PbO+BiO3/B2O3), the growth rate of garnet thick films becomes large. The growth rate of single crystal thick film can be expressed in terms of the driving force for growth of garnet thick film In(Cl/Ce) and the resistances to growth δ/D + Cl/K. The growth rate of single crystal thick film depends mostly upon the resistances to growth rather than the driving force for growth. There was a large decrease in the crystal growth resistance δ/D + Cl/K as low as 103sec/cm, and the bulk supersaturation In(Cl/Ce) is decreased by 101~102 if Bi2O3 is added to PbO/B2O3 solvent. |
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| Key Words |
| LPE, Liquid phase Epitaxy, Garnet, Single crystal, Growth kinetics driving force, Bulk supersaturation, (TbBi)3(FeAlGa)5O12 single crystal thick filims |
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