| Abstract |
| Texture character and strength in the Cu film are a function of sublayer material, film thickness, bath chemistry, deposition parameters and twin boundary development that is also related to processing conditions and film geometry. The present work summarizes grain growth behavior and texture development depending on deposition methods(PVD, electro-deposition) and annealing conditions in the Cu thin films of 480,850 nm thickness deposited on a Ta(25 mn)/Si wafer using EBSD(electron backscatter diffraction) in FE-SEM. Each sample was annealed in vacuum at 200, 300, 400, 500℃ for 1 hour. The grain growth and crystallographic texture are described and analyzed in connection with film thickness, deposition methods and annealing temperature having an influence on the annealing texture development. |
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| Key Words |
| Cu films, grain growth, twin, EBSD, annealing texture |
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