| Abstract |
| Ultrathin silicon oxides were grown in SC-1, H2O2 and ozonated water (O3 in DI water) in order to investigate the hydrophilicity and stability of each grown oxide layers. Thickness of oxide and contact angle were measured, and oxide layers were characterized by using and X-ray photoelectron spectroscopy (XPS). It is found that oxides grown in ozonated water revealed thicker layer, faster oxidation rate and better thickness uniformity (3%) compared to those grown in SC-1 or H2O2. Analysis of XPS also showed that relative intensity of SiO2 peak on the surface grown in ozonated water was stronger than that grown in SC-1 or H2O2. It is concluded that superior hydrophilic oxide grown in ozonated water is due to the faster formation of stable oxide layers. |
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| Key Words |
| ozone, SC-1, oxide film, XPS, contact angle |
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