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Vol.44, No.11, 776 ~ 782, 2006
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| Title |
| Effects of Mo nder-Layer Thickness on the Hillock Formation and Micro-structure of Al Interconnects for TFT-LCD |
| 설재복 Jea Bok Seol , 구길호 Gil Ho Gu , 김형석 Hyung Sook Kim , 서주형 Jo Hyung Suh , 박찬경 Chan Kyung Park |
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| Abstract |
| The effects of Mo under-layer thickness on the hillock formation and microstructure of AI films for interconnects of TFT-LCD have been investigated. The density and size of hillock on AI films were successfully reduced by applying Mo under-layer between Al and SiO2 substrate, because Mo under-layer improved (111) textured growth and grain size of Al film. The optimum thickness of Mo was 30 nm for reducing the hillock formation. In addition, the hillock density and size of Al films were more dominantly dependent on the grain size of Al rather than (111) textured growth of Al. The (111) textured growth and grain size of Al films increased with increasing Mo thickness up to 30 nm, however, the grain size of Al with 50 nm thick Mo decreased due to the increase of Mo surface roughness. |
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| Key Words |
| pure Al interconnects, Mo under-Layer, hillock formation |
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