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Vol.44, No.7, 511 ~ 518, 2006
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| Title |
| Optimization of High Temperature Thermoelectric Properties of TiNiSn-Based Half-Heusler Compounds |
| 김성웅 Sung Wng Kim , 홍성길 Sung Kil Hong , 최답천 Dap Chun Choi , Yoshisato Kimura , Yoshinao Mishima |
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| Abstract |
| The effect of Hf alloying on Ti site, and Sb doping on Sn site for the optimization of high temperature thermoelectric properties of TiNiSn-based compounds was studied. Also, to achieve a low thermal conductivity, a powder metallurgy technique is used for the fabrication of the compounds. It was found that Hf alloying on Ti site reduced the thermal conductivity significantly to a low value of 3.8 W/mK at room temperature. Also, Sb doping on Sn site led to a remarkable enhancement of power factor of 4.1 mW/mK2. Further reduction of thermal conductivity was achieved in hot pressed samples. In hot pressed Ti(0.95)Hf(0.05)NiSn(0.99)Sb(0.01) sample, the dimensionless figure of merit, ZT reaches 0.78 at 770 K. |
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| Key Words |
| TiNiSn half-Heusler, Powder metallurgy, Thermoelectric properties, Seebeck coefficient, Electrical resistivity, Thermal conductivity, Dimensionless figure of merit |
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