| Abstract |
| Recent emphasis on development of light-weight/ high-temperature structural coatings for aerospace applications, e.g. hypersonic vehicles, has generated renewed interest in ordered intermetallics, especially titanium aluminides. Of the three binary intermetallics under consideration in this system (Ti3Al, TiAl and TiAl3) the first two have been more extensively studied. These intermetallics can be produced by sputter deposition from single target of the intermetallic compound of chosen composition. The room temperature sputter deposited thin films usually consist of an amorphous mixture of Ti and Al. In the present study, the thin film of Ti-Al intermetallic compound was deposited at room temperature and elevated substrate temperature by using a two-facing-targets-type DC magnetron sputtering system with Al-rich(25Ti75Al (atm%)) composition of binary Ti-Al alloy target. The crystallization process of Ti-Al thin films have been studied by X-ray diffraction(XRD), field-emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM). The results of the phase transformations of thin films by heating substrate are Al + (Ti) → TiAl2 → Ti2Al5. In case of thin films by annealing treatment, phase transformation is Al + (Ti)/TiAl2/ Ti2Al5 →αTiAl3/ Ti2Al/TiAl3. The results of the selected area electron diffraction patterns analyses are in accord with XRD results. Dynamic hardness of films, dynamic hardness increased with increasing annealed temperature. |
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| Key Words |
| Ti-Al intermetallic compound thin films, TFT type DC sputtering system, Heating substrate, The effect of film thickness |
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