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Vol.43, No.10, 672 ~ 678, 2005
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| Title |
| Electronic,Magnetic & Optical Materials ; Thickness Dependence of Electrical Resistivity of High Purity Cu Films Deposited by Applying Substrate Bias Voltage |
| 임재원 Jae Won Lim , 배준우 Joon Woo Bae , Makoto Mikami , Kouji Mimura , Minoru Isshiki |
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| Abstract |
| The thickness dependence of the electrical resistivity of high purity Cu films deposited by applying a negative substrate bias voltage of -50V was evaluated using the surface scattering of Fuch-Sondheimer (F-S) model and the grain boundary scattering of Mayadas-Shatzkes (M-S) model. For fitting the F-S and M-S models to the experimental data, we have used the approximate equations described by F-S and M-S models and have combined two approximate equations to propose a simple form. By fitting the theoretical model with the simple form, the electrical resistivity of Cu films was in a good agreement with the theoretical curve under the following condition; the film thickness is 2.2~2.3 times than the average grain size at the surface scattering coefficient p = 0, and the grain boundary reflection coefficient R = 0.24. Furthermore, it was found that the effect of resistivity increase produced by solute impurities in the Cu films could be ignored to evaluate the resistivity increase. |
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| Key Words |
| Thin film, Copper, Electrical resistivity, Impurity, Surface scattering, Grain boundary scattering, Grain size |
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