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Vol.42, No.12, 1029 ~ 1034, 2004
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| Title |
| CuPt-type ordering in CdxZn(1-x) Te Epitaxial Layers Grown on GaAs (001) Substrates by Molecular Beam Epitaxy |
| 이호성 H. S. Lee , 이정용 J. Y. Lee , 김태환 T. W. Kim , 권명석 M. S. Kwon , 박홍이 H. L. Park |
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| Abstract |
| We have studied an atomic ordering and ordered domains in Cd_(x)Zni_(1-x),Te epilayers grown by molecular beam epitaxy on ZnTe buffer layers. The composition of Cd_(x)Zni_(1-x)Te thin films was determined by X-ray diffraction patterns using the Vegard`s law. Selected area electron diffraction pattern and high-resolution transmission electron microscopy measurements were performed in order to investigate the ordered structure and ordered domains in Cd_(x)Zni_(1-x),Te thin films. The strong contrast modulations along the [001] direction parallel to the growth direction were observed in samples with composition x = 0.15~0.76. A superstructure reflection spots corresponding to a CuPt-type ordering were observed. Ordered domain regions were randomly distributed in Cd_(x)Zni_(1-x),,Te thin films. A possible atomic arrangement of and a formation mechanism for the CuPt-type ordered structure in the Cd_(x)Zni_(1-x);Te epitaxial layer are presented based on the TEM results. These results provide important information on the microstructural properties for enhancing efficiencies of the devices operating at the blue-green region of the spectrum. (Received July 12, 2004) |
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| Key Words |
| CuPt, Atomic ordering, CdZnTe, Transmission electron microscopy |
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