발간논문

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Vol.42, No.9, 772 ~ 777, 2004
Title
Agglomeration of Copper Films by H2 Annealing
배준우 Joon Woo Bae , 임재원 Jae Won Lim , Minoru Isshiki
Abstract
The agglomeration and time dependence of Cu films in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650℃ for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that the nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.
Key Words
Copper, Void, Agglomeration, Resistivity, Thin film
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