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Vol.42, No.7, 611 ~ 616, 2004
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| Title |
| Electronic Magnetic & Optical Materials ; Effect of Post-Annealing on Microstructure and Magnetoresistance of Sputtered Semimetal Bi Thin Film |
| 전민홍 M. H. Jeun , 장준연 J. Y. Chang , 한석희 S. H. Han , 한준현 J. H. Han , 이우영 W. Y. Lee |
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| Abstract |
| We explore the possibility of sputtered Bi thin film applicable for the spin device by investigating the change in microstructure and magneto-resistance (MR) of post-annealed Bi film. Randomly oriented fine grains of which size was measured to about 100 nm (nano meter) were found in as-sputtered Bi. Careful annealing done at only 1.4℃ below the melting temperature of Bi results in not only grain growth up to 1.2 pm but also textured grains well aligned to [003] preferred orientation of Bi. The MR for as-sputtered Bi film was hardly observed regardless of measuring temperature, whereas those of annealed were found to reach 30,000% at 4 K and 600% at 300 K respectively. The drastic change in MR after annealing is largely attributed to the significant grain growth decreasing grain boundary scattering as well as to the trigonal-axis oriented microstructures diminishing anisotropy scattering of moving electron. Our results demonstrate sputtered Bi thin film can be usable for spintronic devices by employing a suitable post annealing treatment. (Received March 29, 2004) |
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| Key Words |
| Bismuth, Sputter, Semimetal, Magnetoresistance, MR, Spintronics |
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