| Abstract |
| Results of stress analysis on Metal 1/Via 1/Metal 2 AI-0.5%Cu interconnect are reported as it cools from ILD (Inter-Level Dielectric) deposition temperature to room temperature and subsequent heating to 200℃ (electromigration test temperature) for three values of Metal 1 reservoir length for a fixed length of Metal 2 reservoir length. Computed stress fields are connected to the vacancy concentration distribution in line and via by assuming both steady state for the vacancy concentration and no current flow in the reservoir region during electromigration test. Finally, the reservoir effect on the electromigration lifetime is analyzed using the normalized vacancy concentration distribution in the reservoir region of the multilevel Al-Cu interconnect structure, which were used to estimate the probability of the initial void formation in the reservoir region. (Received May 10, 2004) |
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| Key Words |
| Stress, Electromigration, Via, Microelectronic devices, Reservoir |
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