| Abstract |
| Pretreatment of the underlying film surface is essential in molecular organic chemical vapor deposition (MOCVD) of metals. Effects of surface treatment techniques including Ar plasma, H_(2) plasma, and Pd sputtering treatments of the underlying TaSiN film surface on the Ru nucleation density in Ru-MOCVD were compared with each other. According to the scanning electron microscopy (SEM) and Auger electron emission spectrometry (AES) analysis results Pd sputtering was found to be most efficient in enhancing Ru nucleation. Thin Pd buffer layer formed on the TaSiN film by sputtering offers catalytic surface for easier nucleation of Ru. On the other hand hydrogen plasma treatment enhances Ru nucleation by removing oxygen and nitrogen atoms at the TaSiN film surface. In contrast Ar plasma treatment removes not only oxygen and nitrogen atoms but also Ta atoms. Pd sputtering seems to be the best of these three pretreatment techniques for Ru-MOCVD. (Received December 22, 2003) |
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| Key Words |
| Ru MOCVD, Nucleation enhancement plasma treatment, Pd sputtering |
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