| Abstract |
| FE-MILC(Field Enhanced Metal Induced Lateral crystallization) growth rate of amorphous silicon thin film and its microstructure were intensively investigated. In the case of applying E-field, the growth rate was drastically increased toward (+) pole direction, while the growth rate toward (-) pole was decreased. It was revealed that the microstructure of MILC area was changed by applying E-field and its direcction, which was investigated by FE(Feild-Emission)-SEM. These Phenomena can be explained by hopping model of Ni ion and Ni vacancy in the NiSi_(2) phase and its interface at the front pf MILC region. (Received February 2, 2004) |
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| Key Words |
| MILC, FE-MILC, Ni ion Ni Vacancy Hopping Model, FE-SEM, Polycrystalline silicon |
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