발간논문

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Vol.37, No.2, 232 ~ 238, 1999
Title
Research Paper / Electronic Magnetic & Optical Materials : Electrical and Thermoelectric Properties of SbI3 - doped 33.3 % Bi2Te3 - 66.7 % Sb2Te3 Thermoelectric Semiconductors )
현도빈D . B . Hyun, 황종승J . S . Hwang, 심재동J . D . Shim, 오태성T . S . Oh, 황창원C . W . Hwang
Abstract
The temperature dependences of the electrical and thermoelectric properties of the SbI₃-doped 33.3% Bi₂Te₃66.7% Sb₂Te₃ single crystals have been measured at temperatures ranging from 77K to 600K. The scattering parameter of the 33.3 Bi₂Te₃-66.7% Sb₂Te₃ single crystals was determined as s = 0. With increasing the amount of SbI₃ dopant, the hole concentration of the 33.3% Bi₂Te₃-66,7% Sb₂Te₃ single crystal is decreased, resulting in the increment of the Seebeck coefficient and electrical resistivity, and the temperature for the maximum figure-of-merit shifted to lower temperature. A maximum figure-of-merit of 2.3×10^(-3)/K was obtained for 0.3 wt% SbI₃-doped specimen. It has been revealed that. the addition of SbI₃ as a donor dopant is useful in controlling the hole concentration of p-type 33.3% Bi₂Te₃ 66.7% Sb₂Te₃ alloy system.
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