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Vol.37, No.2, 211 ~ 220, 1999
Title
Research Paper / Surface Treatment : The Formation and Phase Analysis of Ni - Si Diffusion Layers Formed by Gas Siliconizing of Nickel
윤진국Jin Kook Yoon, 고흥석Hung Suk Ko, 김재수Jae Soo Kim, 최종술Chong Sool Choi
Abstract
Nickel plate was siliconized with a gas mixture of SiC1₄ and H₂ in the temperature range from 1173K to 1323K. Effect of siliconizing variables on the growth behavior and microstructures of Ni -Si diffusion layera was studied. The nickel silicide layers consisted of γ-Ni_5Si₂, δ-Ni₂Si and θ-Ni₂Si phase at siliconizing temperature. During furnace cooling from siliconizing temperature to room temperature the θ-Ni₂Si phase was decomposed` to large δ-Ni₂Si, small δ-Ni₂Si, ε-Ni₃Si₂ and NiSi phase depending on the silicon concentration. After an incubation period necessary for nucleation of each phase, the growth rate of nickel silicide layers obeyed a parabolic law and was controlled by solid diffusion of nickel which was the primary diffuser in N-Si compounds leading to the void formation at the silicides-nickel interface. These was a tendency for the thickness of lower silicide layer to be a constant at the beginning of the nucleation and growth of the adjacent higher silicide layer. The growth behavior and microstructures of nickel silicide diffusion layers was dependent on the difference between the silicon flux supplied by gas siliconizing and the nickel flux supplied by solid diffusion from substrate which were controlled by siliconizing variables.
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