발간논문

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Vol.36, No.10, 1708 ~ 1715, 1998
Title
Effect of Bonding Temperature on the Microstructure of Ti / Al bond lnterface and Bonding Strength
이태원 , 김인겸 , 이지환 Tae Won Lee , In Kyum Kim , Chi Hwan Lee
Abstract
This paper was focused to investigate the effect of bonding temperature on the microstructure of Ti/Al bond interface and the bonding strength. The bonding of Ti/Al with Al-10Si-1Mg(wt.%) filler metal has been conducted at the temperature range of 560∼640℃ for 30min under bonding pressure of 0.4MPa. The liquidus temperature of filler metal was 582℃. The intermetallic compounds, such as Ti_7Al_5Si_(12), Ti_9Al_(23) and Al₃Ti, are found to be formed in the Ti/Al interface at bonding temperatures above 600℃. Dominant phase in intermetallic compound layer is Ti_7Al_5Si_(12) at 600℃ and Ti_9Al_(23) at 640℃. The thickness of intermetallic compound layer was increased with increasing bonding temperature. It was considered that the growth of intermetallic compound layer had relevance to the transformation of dominant phase in intermetallic compound layer with bonding temperature; the intermetallic compound layer tend to grow by the diffusion of silicon to aluminium-base metal from Si rich phase(Ti_7Al_5Si_(12)). This result indicated that dominant phase was transformed Ti_7Al_5Si_(12) into Ti_9Al_(23) With increasing bonding temperature through diffusion of silicon. It was found that the maximum bonding strength was 92MPa at the temperature of 600℃.
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