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Vol.36, No.9, 1461 ~ 1470, 1998
Title
Effects of Cl / H Input Ratio on the Chemical Vapor Deposition Rate of Silicon on Molybdenum Substrate
윤진국 , 윤호상 , 김희수 , 백영현 , 김재수 Jin Kook Yoon , Ho Sang Yoon , Hee Soo Kim , Young Hyun Paik , Jae Soo Kim
Abstract
Under deposition conditions limited by gas transport process through a gas boundary layer to the substrate, the etching effect of Cl/H input ratio on the chemical vapor deposition rate of silicon on molybdenum substrate was investigated in the temperature range of 1173K and 1473K using hot-wall horizontal reactor and a gas mixture of SiCl₄ and H₂. The deposition amount of silicon increased with increasing Cl/H input ratio but decreased at higher Cl/H input ratio and finally attained a constant value. At 1173K, the deposition rate of silicon obeyed linear law at low Cl/H input ratio in which the outer layer of molybdenum substrate was pure silicon but parabolic law at high Cl/H input ratio in which that was MoSi₂. At 1473K, however, the deposition rate of silicon obeyed parabolic law irrespective of Cl/H input ratio in which the outer layer of molybdenum substrate was MoSi₂. The etching effect of Cl/H input ratio on the deposition rate of silicon were explained by thermodynamic calculations in which the variation of silicon activity on substrate surface induced from the difference of silicon flux between gas transport process and solid diffusion process was considered.
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