| Abstract |
| Cu films as a seed layer were deposited on Si (100) substrates by applying a negative substrate bias voltage. The electrical resistivity, surface roughness, impurity content and step coverage of the Cu films were investigated using the resistivity measurement, X-ray diffraction analysis, atomic force microscopy, secondary ion mass spectroscopy and scanning electron microscopy. The Cu films deposited at the substrate bias voltage of -50 V showed higher purity, stronger (111) preferred orientation, smoother surface and better step coverage than those of the Cu films deposited without the substrate bias voltage. The electrical resistivity of the Cu films considerably increased as the film thickness decreased. In the case of Cu(100nm)/Ta(50nm)/Si structures, the Cu films deposited by applying the substrate bias voltage maintained a complete (111) preferred orientation without (200) texture even after the thermal annealing at 450℃ for 60 min. |
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| Key Words |
| Copper, Seed layer, Ion bombardment, Resistivity, Substrate bias voltage |
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