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Vol.41, No.9, 578 ~ 585, 2003
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| Title |
| A Study on Characterization of Localized Corrosion in Multilayered WC-Ti1-xAlxN Coatings on AISI D2 Steel |
| 안승호 An Seung Ho , 이정호 Lee Jeong Ho , 김호건 Kim Ho Geon , 김정구 Kim Jeong Gu , 한전건 Han Jeon Geon |
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| Abstract |
| Multilayered WC-Ti_(1-x)Al_(x)N coatings are characterized by periodically repeated structures of lamellae of WC-Ti/WC-Ti_(1-x)Al_(x)N. WC-Ti_(1-x)Al_(x)N coatings of changing Al concentration were deposited on AISI D2 steel by high-ionization sputtered plasma vapor deposition (PVD). The Al concentration could be controlled by using evaporation source for Al and fixing the evaporating rate of other metals. Four kinds of WC-Ti_(1-x)Al_(x)N coatings were prepared: WC-Ti_(0.6)Al_(0.4)N, WC-Ti_(0.53)Al_(0.47)N, WC-Ti_(0.5)Al_(0.5)N and WC-Ti_(0.43)Al_(0.57)N. The corrosion behavior of WC-Ti_(1-x)Al_(x)N coatings was investigated using electrochemical techniques in deaerated 3.5% NaCl electrolyte (galvanic corrosion test, potentiodynamic polarization test, electrochemical impedance spectroscopy and Mott-Schottky method) and surface analyses (GDOES, SEM and EDS). Particular attention was paid to the effect of growth defects on the coating properties related to the corrosion behavior. The results of the coating and substrate galvanic corrosion test showed low galvanic current densities. In the potentiodynamic polarization test and EIS measurement, the corrosion current density of WC-Ti_(0.5)Al_(0.5)N was lower than others and presented higher R_(ct) values than others after 240 h immersion time. This could be attributed to the formation of a Ti oxide, which promotes partial closing of the defects. Capacitance values obtained from EIS as a function of different potentials (C^(-2) vs E) showed that the oxide layer exhibited an n-type semiconductor behavior. |
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| Key Words |
| GDOES, Galvanic corrosion test, EIS, Mott-Schottky method |
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