발간논문

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Vol.40, No.9, 1001 ~ 1007, 2002
Title
Electronic , Magnetic & Optical Materiais : Atomic Layer Deposition of Al2O3 Films
김재범Jae Bum Kim,오기영Ki Young Oh,이종무Chong Mu Lee
Abstract
Al2O3 is considered as a promising alternative to SiO2 for gate dielectric materials in future Si-based integrated circuits owing to its high dielectric constant and low leakage current. In this study, amorphous Al2O3 films on P type Si(100) at 350℃ have been successfully grown by an atomic layer deposition (ALD) of a top-injection type using Al(CH3)3-trimethylaluminum : TMA and H2O. TMA is a conventional Al precursor and H2O is a conventional oxygen precursor. The growth rate of Al2O3 films was 0.8Å/cycle for all substrates employed under the surface controlled process. According to the AES analysis, the Al2O3 films deposited by TMA contained about 1 at% carbon. The XPS analysis of Al2O3 films grown revealed only an oxidized Al 2p peak and a typical O 1s peak of metal oxides. The electrical properties of Al2O3 films were investigated by I-V measurements. The leakage current values of Al2O3 films were as low as 10^(-9)Å/㎠. The step coverage of the Al2O3 films was about 100% and no reacting layer formed at the top and bottom interfaces.
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