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Vol.39, No.11, 1294 ~ 1298, 2001
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| Title |
| Electronic , Magnetic & Optical Materials : The Effect of Temperature Profile on Metal - Induced lateral Crystallization |
| 박혜향Hye Hyang Park,윤여건Yeo Geon Yoon,김기범Gi Bum Kim,주승기Seung Ki Jo |
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| Abstract |
| The effects of annealing condition and temperature gradient on the crystallization of amorphous silicon (a-Si) were investigated by metal-induced lateral crystallization (MILC). We performed poet annealing of a-Si using conventional rapid thermal annealing (RTA) and scan-type RTA. We found that the scan-type RTA was more favorable in term of growth rate than the conventional RTA. With the temperature profile, we carried out the theoretical calculation of the MILC length using the Arrhenius model and compared with the experimental value. Also, we found that there were clear temperature gradient effects on the crystallization of a-Si. Mosaic patterns of Ni on top of the a-Si enable us to measure the effects of temperature gradient, that is, positive and negative gradient, on the crystallization of a-Si. As a result, a-Si with positive temperature gradient was crystallized faster than that of with negative temperature gradient. |
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