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Vol.39, No.5, 585 ~ 589, 2001
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| Title |
| Electronic , Magnetic & Optical Materials : A Study on the Energy Band Bending at the Surface of P - Type GaN with Surface Treatment Measured by Synchrotron Radiation Photoemission Spectroscopy |
| 김종규Jong Kyu Kim,장호원Ho Won Jang,김기정Ki Jeong Kim,김봉수Bong Soo Kim,이재원Jae Won Lee,박용조Yong Jo Park,김태일Tae Il Kim,이종람Jong Lam Lee |
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| Abstract |
| The effects of surface treatments on the energy band bending below the surface of p-type GaN were studied using synchrotron radiation photoemission spectroscopy. It was found that surface oxides composed of Ga and O, namely GaO_x, were formed during the high temperature processes, the growth ($gt;900℃) and the activation ($gt;700℃), causing the production of Ga vacancies, V_(Ga), below the oxides. The aqua regia treatment was effective in removing GaO_x on p-type GaN, leading to the Fermi level pinning at the energy levels of V_(Ga) locating near the valence band edge. This causes the decrease of barrier height for the transport of holes, resulting in the reduction of the contact resistivity by four orders of magnitude. |
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