발간논문

Home > KJMM 논문 > 발간논문

Vol.39, No.1, 110 ~ 116, 2001
Title
Effect of Moving Velocity of the Heat Source on Bonding Strength in the Direct Silicon Wafer Bonding Using Linear Annealing Method
주영철Young Cheol Joo,이진우Jin Woo Lee,주영창Young Chang Joo,강춘식Choon Sik Kang
Abstract
A linear annealing method was utilized to make a direct wafer bonding of 10 ㎝ Si wafers for a SOI application. In the linear annealing method, a halogen lamp moves with a constant velocity above silicon wafer pair bonded with hydrogen bonding. In order to optimize the processing parameters such as initial heat treatment time and moving velocity, bonding strengths were measured when the moving velocity varies in the range of 0.05-0.5 ㎜/s and these results were compared with numerical calculation using finite difference method. The bonding strength from the high speed anneal (0.5 ㎜/s) showed a similar strength as that from the slow speed (0.05 ㎜/s) process and this result agrees with the numerical calculation. Based on the present study, it is expected that the process speed can be increased as high as 200 sec/wafer without decreasing the bonding strength.
Key Words
| PDF
대한금속∙재료학회 │ (06633) 서울시 서초구 서초대로 56길 38 대한금속∙재료학회 회관 (서초1동 1666-12번지)
Tel : 070-4266-1646 │ FAX : 02-557-1080 │ E-mail : metal@kim.or.kr
Copyright ⓒ 2013 사단법인 대한금속∙재료학회 All rights reserved.