발간논문

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Vol.39, No.3, 334 ~ 340, 2001
Title
Research Paper / Surface Treatment : Removal of Cr and Zn Impurities from the Si Substrate using the Remote H2 Plasma
이성욱Seung Wook Lee,이재갑Jae Gab Lee,이종무Chong Mu Lee
Abstract
The removal of Cr and Zn impurities on Si substrates using the remote H₂ plasma was investigated. To determine the optimum process condition, the remote H₂ plasma cleaning was conducted for various rf-powers and plasma exposure time. The optimum process parameters for Cr and Zn removal were set at the rf-power of 20W and plasma exposure of 5 min. The concentrations of Cr and Zn impurities were reduced by more than a factor of 2 and the minority carrier lifetime increased after the remote plasma H₂ cleaning. Also RMS roughness decreased by more than 30%∼50% after the remote H₂ plasma cleaning. AFM analysis results also show that the remote H₂ plasma cleaning makes no damage to the Si surface. The removal mechanism of the Cr and Zn impurities in the remote H₂ plasma cleaning is proposed to be the lift-off mechanism during the removal of the underlying chemical oxides.
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