| The binary system Ti-Al intermetallic compound thin films were deposited on Corning glass and silicon wafer substrate by a two-facing-targets sputtering system using two binary Ti-Al alloy targets with stoichiometric composition. The crystallization process of the Ti-Al thin film has been studied by X-ray diffraction, field-emission scanning electron microscope and transmission electron microscope. The as-deposited films are amorphous phase when deposited at ambient temperature. The Ti-Al films deposited were annealed at 773-973 K. When annealed at 778 and 873 K, the films deposited on the corning glass substrate were crystallized into Ti₃Al and Ti₂Al_5 phases. Ti₃Al, Ti₂Al_5 and TiAl phases were obtained after annealed at 973 K. Crystallization behavior of Ti-Al films deposited on silicon wafer substrate, when annealed at 773 K, was the same as the case of corning glass substrate. On the other hand, when annealed at 823 K, the films were crystallized into Ti₃Al, Ti₂Al_5, α-Ti(Al) and Ti_7Al_5Si_(12) phases. When annealed above 873 K, α-Ti(Al) and Ti_7Al_5Si_(12) phases still remained. The results of the selected area electron diffraction patterns analyses are consistent with XRD results. |
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